Semipermeable liquid crystal display device and manufacturing method thereof

ABSTRACT

Simplified manufacturing method for active matrix type semipermeable liquid crystal display devices also having improved productivity. In a manufacturing method for an active matrix type semipermeable liquid crystal display device, an interlayered insulator film is formed and processed in process A for forming an interlayered insulator film on a silicon layer forming the source and drain of the TFT; in a process B for forming a photoresist layer on the interlayered insulator film; in a process C for forming the photoresist layer in a designated pattern using a mask formed with a pattern below the resolution limit in the section for forming the reflecting electrode; in a process D for patterning the photoresist layer made in process C as the etching mask for etching the interlayered insulator film. After the process D, a source electrode, signal lines, drain electrode and reflecting electrode are simultaneously formed from the metallic film.

FIELD OF THE INVENTION

[0001] The present invention relates to technology for shortening themanufacturing process for semipermeable liquid crystal display devicesby forming surface irregularities on the reflective electrodesimultaneously with forming openings on the permeable section of thepixel in the interlayered insulating film on silicon film formed withthe source and drain of the thin film transistor.

DESCRIPTION OF THE RELATED ART

[0002] The drive side of the TFT (thin film transistor) substrate of theactive matrix type semipermeable liquid crystal display device of therelated art having a reflective electrode composed of a reflectivediffusion plate formed with surface irregularities, and also having atransparent electrode made from transparent conductive film in thetransparent section of the pixel is fabricated as shown in FIG. 12Athrough FIG. 12I. The process for fabricating liquid crystal deviceshaving a pixel structured from a bottom gate type TFT is shown in FIG.12A through FIG. 12I, however a pixel with a top gate type structure TFTis fabricated in basically the same process.

[0003] As shown in 12A, a metallic film is first formed on a transparentsubstrate 1, and a gate G and an auxiliary capacitor electrode Cs formedby etching using photolithography, a gate insulation film 2 deposited,and a polysilicon film 3 formed.

[0004] Next, to prevent doping of impurities into the channels duringimpurity doping of the source and drain regions, a stopper 4 is formedto self-align with the gate G on the polysilicon film comprising thechannels, and the source region and drain region are doped withimpurities.

[0005] Islands shapes are then formed separately on the polysilicon film3 using the photoresist process and the etching process, and a lowtemperature thin film transistor (TFT) is formed.

[0006] The interlayered insulator film 5 is formed next in FIG. 12B.Next, in order to form contact holes and an opening for the pixeltransparent section, a photoresist layer 6 is first of all formed on theinterlayered insulator film 5, and the photoresist layer 6 is patternedin FIG. 12C by the photolithographic method using as a pattern mask, toform contact holes and an opening for the pixel permeable section T asthe photomask. Etching is then performed using the interlayeredinsulator film 5 as the etching mask, and contact holes H₁ and the pixelpermeable section T opening are formed (FIG. 12D).

[0007] The metallic film is then formed using a stopper etc. A signalline and source electrode S₁ connecting to the TFT source S by way ofthe contact hole H₁ are formed by etching, and a drain source electrodeD₁ connecting to the drain D of the TFT by way of the contact hole H₁ isformed by etching as in FIG. 12E.

[0008] The irregularities forming the base of the surface irregularitiesof the reflecting electrode having a reflective diffuser function areformed as described next using two layers of photoresist material. Afirst layer 7 forming the basic structure of the irregular shape isformed by photolithography using the photoresist material in FIG. 12F.The photomask is used to make openings for a second collector hole 2 andpixel permeable section T for conduction between the source electrode S₁and drain electrode D₁. Next, a second layer 8 for improving thereflection is formed as shown in FIG. 12G by photolithography using aphotoresist material identical to the first layer 7. The mask isutilized to make openings for the third collector hole H3 and pixelpermeable section T for connection with the drain electrode D₁. Asurface irregularity (rough) section is in this way formed from thefirst layer 7 and second layer 8 structure.

[0009] A transparent conducting film 9 constituting the transparentelectrode of the pixel permeable section T is next formed by sputtering,etc. This transparent conducting film 9 connects to the drain electrodeD1 and contact hole H3 as shown in FIG. 12H. The transparent conductingfilm 9 also forms the reflecting section of the pixel and may also beused as the base material (or underlayer) of the reflecting electrode.

[0010] A metallic film such as aluminum or silver having highreflectivity is next deposited on the reflecting section R of the pixel,and a reflecting electrode 10 is formed as in FIG. 12I byphotolithography.

[0011] The drive side of the TFT substrate is in this way completed. Apolarizing film is coated on this TFT substrate, and opposing substrateformed of the color filter and opposing transparent electrode, and apolarizing process is performed, both the substrates are overlapped oneach other using a gap material to maintain a suitable gap between thesubstrates, liquid crystal injected and sealed to obtain the liquidcrystal display panel.

[0012] In the fabrication process for the drive side substrate of theTFT (thin film transistor) substrate of the active matrix typesemipermeable liquid crystal display device of the related art as shownin FIG. 12A through FIG. 12I, a seventh and an eighth layer are formedfrom photoresist material to apply specified surface irregularities(rough shape) to a reflecting electrode 10, and since ultimately a totalof three insulating layers including an interlayered insulator film 5are formed between the reflecting electrode 10 and the silicon filmforming the source S and drain D of the TFT, that require patterningprocesses by respective lithographic methods, and further since a sourceelectrode S₁, a drain source electrode D₁, and a reflecting electrode 10must be formed by separate processes, the problem occurs that manyman-hours are required and the manufacturing cost is high.

SUMMARY OF THE INVENTION

[0013] Whereupon, the present invention has the object of providing asimple and manufacturing process for an active matrix type semipermeableliquid crystal display device yielding improved productivity.

[0014] To achieve the above objects, in the manufacturing process forthe semipermeable liquid crystal display device by the inventors of thepresent invention, a photoresist layer is formed on the interlayeredinsulator film on the silicon layer forming the source and drain of theTFT device, and corresponding surface irregularities are simultaneouslyformed on the reflecting electrode of the pixel reflecting section, andopening for the pixel transparent section on the photoresist layer, bypatterning with photolithographic methods utilizing a designatedphotomask on that photoresist layer, so that by forming surfaceirregularities (rough shapes) on the pixel reflecting sectionsimultaneous with forming an opening on the transparent section of thepixel in the interlayered insulator film, a greatly shortenedmanufacturing process for liquid crystal devices can in this way beobtained.

[0015] The present invention in other words, provides a manufacturingmethod for an active matrix type semipermeable liquid crystal displaydevice consisting of an interlayered insulator film on the silicon layerforming the source and drain of the TFT, a reflecting electrode formedwith surface irregularities (rough sections) on the interlayeredinsulator film in the pixel reflecting section, and a transparentelectrode consisting of a transparent conductive film on the pixeltransparent section, wherein in the forming and processing of theinterlayered insulator film in the following processes A through D;

[0016] A: is a process for forming an interlayered insulator film on asilicon layer forming the source and drain of the TFT;

[0017] B: is a process for forming a photoresist layer on theinterlayered insulator film;

[0018] C: a process for patterning the photoresist layer by thephotolithographic method wherein, in a process using a mask formed witha pattern below the resolution limit in the section forming thereflecting electrode, the photoresist layer is utilized as thephotomask, so that the photoresist layer corresponding to transparentsection of the pixel and the section forming the contact holes in theinterlayered insulator film of the drain and source can be completelyremoved, and so that surface irregularities can be formed in thephotoresist layer corresponding to the section forming the reflectingelectrode,

[0019] D: a process using the photoresist layer patterned in process Cas the etching mask for completely etching an opening in theinterlayered insulator film for the transparent (permeable) section ofthe pixel and the section for forming the contact holes, and for etchingthe interlayered insulator film so that surface irregularities areformed in the interlayered insulator film of the section forming thereflecting electrode.

[0020] The invention further provides a manufacturing method inparticular comprising the following sequential processes performed afterthe D process wherein,

[0021] E is a process for simultaneously forming from a metallic film;signal wiring and a source electrode connecting with the source by wayof contact holes, and a reflecting electrode and drain electrodeconnecting to the drain by way of contact holes and signal wiring,

[0022] F is a process for patterning a protective film in a regioncontaining the pixel transparent section and reflecting section, so thatthe section forming the contact hole on the drain electrode as well asthe section for the transparent section of the pixel have openings,

[0023] G is a process for forming a transparent conductive film so as tocomprise a pattern containing the pixel transparent section andreflecting section, and connect the transparent electrode and reflectingelectrode by way of the contact holes, and further in the F process, apatterning method is provided for forming a protective film from thephotoresist layer, characterized in that patterning is by thelithographic method, and in a process using a mask formed with a patternbelow the resolution limit in the section for forming the reflectingelectrode, the protective film is utilized as photomask, so that aprotective film corresponding to the section forming the drain electrodeand permeable sections of the pixel can be completely removed, andsurface irregularities (rough sections) can be formed in the protectivefilm corresponding to the section forming the reflecting electrode.

[0024] The invention further provides a manufacturing method comprisingthe following sequential methods performed after the D process wherein,

[0025] E is a process for simultaneously forming from a metallic film;signal wiring and a source electrode connecting with the source by wayof contact holes, and a reflecting electrode and drain electrodeconnecting to the drain by way of contact holes and signal wiring,

[0026] G_(y) is a process for forming a transparent conductive film soas to comprise a pattern containing the pixel transparent section andreflecting section, and connecting the transparent electrode andreflecting electrode,

[0027] The invention further provides a manufacturing method comprisingthe following sequential methods performed after the D process wherein,

[0028] E_(x) is a process for simultaneously forming a pattern oftransparent conductive film wherein said pattern contains signal wiringand a source electrode connecting with the source by way of contactholes, and a permeable and reflecting section of a pixel, and a drainelectrode connecting to the drain by way of contact holes,

[0029] G_(x) is a process for forming a reflecting electrode from a filmcomposed of metallic film, and connecting to the reflecting electrodeand transparent electrode.

[0030] The present invention further provides an active matrix typesemipermeable liquid crystal display device consisting of an insulationlayer on a silicon film formed as the source and drain of the TFT, areflecting electrode formed with surface irregularities on the insulatorlayer in the reflecting section of the pixel, and a transparentelectrode film made from transparent conductive film in the transparentsection of the pixel wherein, the insulator layer is formed from onelayer of insulator film.

[0031] In a liquid crystal device in particular wherein, the transparentconducting film of the pixel transparent section is extended onto thereflecting electrode, the transparent conducting film connects with thereflecting electrode, and further, a protective film is formed betweenthe reflecting electrode and transparent conducting film, and the cellgap of the liquid crystal display cell is set at ½λ in the permeablesection and ¼λ in the reflecting section, and surface irregularities areformed in the transparent conducting film on the reflecting electrode inthis state.

[0032] A liquid crystal device of the present invention is providedwherein the transparent conducting film and reflecting electrode aresequentially laminated on the reflecting section of the pixel, and thereflecting electrode and transparent conductive film are connected.

[0033] In the manufacturing method for the active matrix typesemipermeable liquid crystal display device of the present invention, aphotoresist layer is formed on the interlayered insulator film on thesilicon film of which the source and drain of the TFT are formed, and bypatterning that photoresist layer by utilizing a designated photomask,an opening with a shape corresponding to the transparent section on thepixel and surface irregularities corresponding to the reflectingelectrode on the reflecting section of the pixel are formed on thephotoresist layer, and by next etching the interlayered insulator filmusing the photoresist layer as an etching mask, surface irregularities(rough shapes) can be formed on the reflecting electrode of thereflecting section of the pixel and an opening formed in the permeablesection of the pixel on the interlayered insulator film. The laminatingprocesses for the photoresist layer required in forming the surfaceirregularities on the reflecting electrode in the active matrix typesemipermeable liquid crystal display device of the related art cantherefore be reduced, and the source electrode, signal wiring, drainelectrode and reflecting electrode formed by separate processes in therelated art can be simultaneously formed by forming one metallic film sothat the manufacturing process for a liquid crystal device can begreatly simplified, and productivity can be boosted.

[0034] Also in the present invention, the transparent conductive film isextended to the reflecting electrode, and the transparent conductivefilm and reflecting electrode are electrically connected, so the silverforming the reflecting electrode in the liquid crystal display cell istransferred to the opposing substrate and the crystallization phenomenoncan therefore be prevented.

[0035] Further in the present invention, by forming a protective filmbetween the reflecting electrode and the transparent conducting film,and by adjusting the thickness of that protective film, the opticalcharacteristics of the reflecting section and permeable section of thepixel can easily be optimized.

BRIEF DESCRIPTION OF THE DRAWINGS

[0036]FIG. 1A through FIG. 1G are drawings showing the processes in themanufacturing method for the liquid crystal display device of thepresent invention.

[0037]FIG. 2A through FIG. 2G are drawings showing the processes in themanufacturing method for the liquid crystal display device of thepresent invention.

[0038]FIG. 3 is a cross sectional drawing of the thin film transistorsubstrate obtained by the manufacturing method of the present invention.

[0039]FIG. 4 is a cross sectional drawing of the thin film transistorsubstrate obtained by the manufacturing method of the present invention.

[0040]FIG. 5 is a flat view of a photomask having a line and spacepattern.

[0041]FIG. 6 is a graph showing the interrelation of the photomask lineand spaces, the exposure time, and reduction in film thickness of thephotoresist layer in the photolithographic process of the photoresistlayer.

[0042]FIG. 7 is a flat view of a photomask having a dot pattern.

[0043]FIG. 8 is a flat view of the photomask used on the photoresistlayer.

[0044]FIG. 9A is a flat view of the photomask pattern for formingsurface irregularities on the photoresist layer.

[0045]FIG. 9B is a side view of the photoresist layer surfaceirregularities formed by using the mask of FIG. 9A.

[0046]FIG. 10A is a flat view of the photomask pattern for formingsurface irregularities on the photoresist layer.

[0047]FIG. 10B is a side view of the photoresist layer surfaceirregularities formed by using the mask of FIG. 10A.

[0048]FIG. 11 is a graph showing the interrelation of the reflectivityand the level difference of the surface irregularities of the reflectingelectrode.

[0049]FIG. 12A through FIG. 12G are drawings showing the processes inthe manufacturing method for the active matrix type semipermeable liquidcrystal display device of the related art.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0050] The embodiments of the present invention are hereafter describedin detail while referring to the accompanying drawings. In the drawings,sections with the same reference numerals are the same or equivalentstructural components.

[0051]FIG. 1 is process drawings of the embodiment of the presentinvention for manufacturing a liquid crystal display device having abottom gate TFT pixel structure.

[0052] First of all in this method, metallic film such as of molybdenum,chromium, aluminum, tantalum, wolfram as shown in FIG. 1A, is formed onthe transparent substrate 1, and a gate G and auxiliary capacitorelectrode Cs formed by dry etching using a photolithographic technique,and a silicon nitride film or silicon oxide film formed as the gateinsulator film 2 by sputtering or carrier vapor (CVD) deposition, thesefilms are formed in laminations, and a polysilicon film 3 furtherformed. The method for forming this polysilicon film 3 is for example,to first form an amorphous semiconductor layer on the gate insulatorfilm 2, and next perform dehydrogenation at a high temperature forlowering the hydrogen concentration of the semiconductor layer, andcrystallizing by an excimer laser, converting the semiconductor layerinto a polysilicon film. The dehydrogenation process may be omitted ifthe concentration of hydrogen atoms is less than one percent. The gateinsulator film and amorphous semiconductor layer are preferably formedconsecutively to obtain stable film quality.

[0053] A stopper 4 is next formed to self-align with the gate G on thepolysilicon film 3 forming the channel section to prevent injectionduring doping of impurities into the source region and drain region. Thestopper 4 here, is a stopper film formed from silicon oxide on the gateinsulator film 4, and then coated on top with resist, and by exposingthe rear side of the resist layer to light using the gate G as a mask,the resist is patterned so that the gate G self-aligns with the sectionformed as the channel, and etching of the stopper film further performedusing this resist layer as the mask, and so a stopper film remains inthe channel forming section.

[0054] The source and drain region are then doped with impurities usingion implantation and ion doping techniques, and the source S and drain Dare formed. The photoresist process and etching process are used to formthe polysilicon film into separate island shapes, and the TFT is formed.The above method for forming the TFT was a low-temperature polysiliconthin-film-transistor forming method, however the manufacturing method ofthe present invention may also be applied to forming amorphous siliconthin-film transistors.

[0055] The forming and processing of the interlayered insulator film isnext performed using the processes A through D.

[0056] An interlayered insulator film 5 is formed (FIG. 1B) frominorganic insulator material such as laminations of silicon nitride filmand silicon oxide film by the carrier vapor deposition (CVD) method orsputtering method.

[0057] In process B, a photoresist layer 6 is formed on the interlayeredinsulator film 5.

[0058] In process C, the photoresist layer 6 is patterned (FIG. 1C) by aphotolithographic technique. In this case, the photoresist layer 6 canbe completely removed from portions corresponding to the section forforming contact holes H₁ and the permeable section T of the pixel formedon the interlayered insulator film 5 of the source S and drain D; and apattern below the resolution limit of the stepper in the reflectingelectrode forming section can be formed using the photomask ofphotoresist layer 6 so that irregular surfaces are formed in thephotoresist layer 6 corresponding to the electrode forming section.

[0059] The actual photomask configuration can be experimentallydetermined by finding the interrelation between the photomask pattern,and the exposure time and film thickness reduction of the photoresistlayer. For example, when the line and space (hereafter abbreviated toL/S) pattern shown in FIG. 5 is exposed to light with the stepper, theinterrelation of the light exposure time and film thickness reductionamount of the photoresist layer is changed according to the L/S (linesand spaces) as shown in FIG. 6. The “Window” outside the graph frame inFIG. 6 shows the case when the S (space) resolution is greater than thelight exposure device. The numerals such as on the right side of the Xindicate the L (μm)/S (μm). In FIG. 6, when the section on thephotoresist layer for forming the contact hole is completely opened to alight exposure amount of 1200 milliseconds, it can be seen that thephotoresist layer can have a film thickness reduction amount of 0.6 μmwhen L=0.25 μm, S=0.50 μm is selected.

[0060] When experimentally finding the reduction in film thickness inthis way, the dot pattern shown in FIG. 6 may also be utilized insteadof the L/S pattern of FIG. 5.

[0061] Besides the above, a more detailed photomask configuration can becalculated from the optical index constant, and the photoresist layerfilm thickness can be controlled by the effective transmittance(permeance) rate of the photomask.

[0062] The actual photomask pattern is formed consecutively or in stepsin patterns not capable of being resolved by the stepper. When formingthe section 21 to completely open the photoresist layer to lightexposure and forming the section for forming surface irregularities onthe photoresist layer, as shown in the photomask 20 of FIG. 8 forexample, the pattern sections 22 forming the irregular section, canconstitute the plurality of fine, concentric, ring-shaped patterns 22 ashown in FIG. 9A not capable of being resolved by the stepper. Byexposing and developing the photoresist layer to light using this kindof photomask, not only can completely open sections and sections formedwith surface irregularities be formed on the photoresist layer, but byheating and reflowing after developing as shown in FIG. 9B, each of thepatterns forming the surface irregularities on the photoresist layer 6can be made into smooth shapes.

[0063] Particular patterns that correspond to the shapes of particularsurface irregularities may be utilized as photomask patterns, such asthe surface irregularities formed on the interlayered insulator film 5for enhancing the reflectivity of the reflecting electrode in a specificdirection. The plurality of ring patterns are for example madeoff-center (eccentric) as shown in FIG. 10A. By then using thisphotomask to expose and develop the photoresist layer 6, and by thenreflowing as necessary, each of the pattern shapes forming the surfaceirregularities of the photoresist layer 6, can be given a sharp inclineon one side, and can be given gentle incline on the other side surfaceas shown in FIG. 10B.

[0064] The reflectivity (rate) of the reflecting electrode is dependenton the level difference (step) formed in the photoresist layer 6 asshown in FIG. 11. The level difference of the pattern is determined byfactors such as the pattern shape of the photomask and amount ofexposure so that the amount of light exposure on the photoresist layer 6and the photomask pattern can be set as needed by forming the leveldifference (step) to obtain the specified reflectivity for thereflecting electrode.

[0065] When the interlayered insulator film 5 is dry-etched using thepatterned photoresist layer 6 as the etching mask, the shape of thephotoresist layer 6 is transferred to the interlayered insulator film 5.At this point, in the present invention, the process D is nextperformed.

[0066] In process D, the photoresist layer patterned in the abovedescribed process C is used as the etching mask, and the interlayeredinsulator film 5 etched by dry etching after removal of the resist layerby a method such as the RIE method or the ICP method, so that thesection forming the contact hole H₁ and the interlayered insulator filmfor the permeable section of the pixel are completely opened, andsurface irregularities are formed on the interlayered insulator film 5at the section for forming the reflecting electrode.

[0067] After the interlayered insulator film 5 is formed in the processD in this way, any further laminating of insulator films is unnecessaryfor forming the surface irregularities on the reflecting electrode.Therefore, when limited to the forming a metallic film on thisinterlayered insulator film 5 to form a reflecting electrode, and on theother hand forming a transparent electrode made from a transparentconductive film in the transparent section of the pixel, a drive sideTFT substrate can easily be obtained and an active matrix typesemipermeable liquid crystal display device can be manufactured. In thiscase, the reflecting electrode and transparent electrode can be formedby the desired forming method and forming sequence, and an optionallayer such as a protective film can be added as needed. Further, liquidcrystal display panels can be fabricated by the normal method utilizingthis TFT substrate and liquid crystal display panels can bemanufactured.

[0068] The liquid crystal device manufactured in this way is the same asthe active matrix type semipermeable liquid crystal display device ofthe known art in the points of having an insulator layer on a siliconfilm comprising the source S and drain D of the TFT, and having areflecting electrode made from reflective diffusion plate formed withsurface irregularities, and also in having a transparent electrode madefrom transparent conductive film in the transparent section of thepixel. However this liquid crystal device is characterized in that theinsulator layer between the silicon film and the reflecting electrode isformed from one layer of insulator film. The present invention thereforealso includes the structure relating to the liquid crystal displaydevice.

[0069] The manufacturing method for the liquid crystal display device ofthe present invention including the processes subsequent to process D,is performed sequentially in the following processes E through G asshown in FIG. 1E through FIG. 1G.

[0070] In process E, a high reflectivity metal such as aluminum, silver,aluminum alloy or silver alloy is deposited by sputtering to form themetallic film 11, and then a signal line and source electrode S₁connecting to the source S by way of the contact hole H₁, as well as areflecting electrode 10 and drain electrode D₁ connecting with the drainD by way of the contact hole H₁ are simultaneously formed by patterningby photolithographic methods and by etching in FIG. 1E. In this case,the structure of the metallic film 11 may comprise many layers of highreflectivity conductive film such as aluminum, silver, aluminum alloy orsilver alloy, and metallic film such as chromium, molybdenum, titanium,tantalum and wolfram.

[0071] In process F, a protective film 12 composed of photoresist isformed in the region including the reflecting and permeable sections ofthe pixel. This protective film 12 is patterned so that the sectionformed with the drain electrode D₁ and the permeable section T of thepixel have openings as in FIG. 1F. Silicon oxides for example, may beused in the forming methods to form the protective film 12 andpatterning performed by photolithograpic and etching processes, howeverfrom the point of view of shortening the process, preferably a film ofphotoresist is formed as in this process F, and patterning of thatphotoresist then performed only by a photolithographic process.

[0072] The thickness of the protective film 12 is preferably set so thecell gap of the liquid crystal display cell is ½λ in the permeablesection and ¼λ in the reflecting section of the pixel. The cell gap forthis kind of liquid crystal display cell must generally meetspecifications that demand brightness on the screen, however in thepresent invention, a cell gap can easily be formed by adjusting thethickness of the protective film 12.

[0073] In process G, the transparent conductive film 9 is formed to bethe pattern containing the reflecting section and permeable section ofthe pixel, and the TFT substrate obtained as shown in FIG. 1G. Thistransparent conductive film 9 is for example formed using ITO as asputtering method, and patterning then performed by a photolithographyprocess and an etching process. The transparent conductive film 9pattern may be formed only in the permeable sections of the pixel and inthe contact sections with the reflecting and permeable sections of thepixel however, rather than just the contact sections with the pixelreflecting and permeable sections, the transparent conductive film 9 canbe extended to the reflective electrode 10 and connected to the (same)electrical potential as the reflecting electrode 10 by way of thecontact hole H₂ so that the silver forming the reflecting electrode 10is transferred to the opposing substrate and the crystallizationphenomenon can be prevented in the liquid crystal cell.

[0074] The TFT substrate that was obtained, and the opposing (facing)substrate on which are formed the color filter and opposing transparentelectrode are coated with wiring polarizing film, and polarizing isperformed, both substrates attached onto each other with sealer usingthe gap material to maintain a suitable gap between the two substrates,and the liquid crystal is then injected and sealed to obtain the liquidcrystal display panel.

[0075] In another manufacturing method of the present invention, thesection for forming the contact hole H₂ on the drain electrode D₁ andthe permeable section T of the protective film 12 made of photoresistcan be completely removed in the patterning of the protective film 12 inthe above described process F, and a pattern below the resolution limitof the stepper in the reflecting electrode forming section formed usingthe photomask of the protective film 12 so that irregular surfaces areformed in the reflecting electrode 10 forming section, and theprotective film 12 may be exposed and developed using the mask of thispattern. A protective film 12 such as in FIG. 2A can in this way bepatterned.

[0076] After the patterning of the protective film 12, the transparentconductive film 9 is formed to be the pattern containing the reflectingsection and permeable section of the pixel in process G described above,and the TFT substrate obtained. On the TFT substrate formed in this way,external light irradiating onto the section in the vicinity of the flatreflecting bottom of the surface irregularities of the reflectingelectrode 10 is scattered (or diffused), and the percentage of externallight irradiating onto the flat surface of the reflecting electrode 10is reduced, and also the light reflecting from the reflecting electrode10 is further scattered (or diffused) due to a differential in therefraction rate between the protective film 12 and the transparentconductive film 9, so that the reflecting properties of the reflectingsection R of the pixel can be improved.

[0077] In yet another manufacturing method of the present invention,after forming the source electrode S₁, signal wiring, drain electrode D₁and the reflecting electrode 10, in the previously described process E,rather than forming the protective film 12 into a pixel region, thetransparent conductive film 9 may be formed in the same way as process G(process G_(y)) and a TFT substrate manufactured as shown in FIG. 3.

[0078] Also, after etching the interlayered insulator film 5, in aprocess E_(x), a pattern may be simultaneously formed of transparentconductive film 9 wherein said pattern contains signal wiring and asource electrode S₁ connecting with the source S by way of contact holesH₁, and a permeable and reflecting section of a pixel, and a drainelectrode D₁ connecting to the drain D by way of contact holes H₁, andin a process G_(x), a reflecting electrode 10 may be formed, and thereflecting electrode 10 and transparent conductive film 9 are connectedby a film composed of aluminum, silver, aluminum alloy or silver alloy,and these processes are performed in sequence, and a TFT substrate maybe manufactured of laminations of the reflecting electrode 10 on thetransparent conductive film 9 as shown in FIG. 4. Here, when thetransparent conductive film 9 is formed by ITO, a film of molybdenum ortitanium is preferably formed beforehand on the ITO film, and themetallic film 11 then deposited afterwards.

[0079] The present invention was described while referring to the abovework drawings however, the present invention may constitute variousembodiments and configurations. For example, a liquid crystal displaydevice having a bottom gate TFT in the pixel structure was shown in thedrawings, however the present invention is also adaptable in the sameway to liquid crystal display devices having a top gate TFT in the pixelstructure.

What is claimed is:
 1. A manufacturing method for an active matrix typesemipermeable liquid crystal display device, comprising: an interlayeredinsulator film on a silicon layer forming said source and drain of athin-film-transistor; a reflecting electrode formed with surfaceirregularities on said interlayered insulator film in said reflectingsection of said pixel; and a transparent electrode made of transparentconductive film on said transparent section of said pixel, wherein inthe forming and processing of said interlayered insulator film in thefollowing processes A through D: A: is a process for forming aninterlayered insulator film on a silicon layer forming said source anddrain of said TFT; B: is a process for forming a photoresist layer onsaid interlayered insulator film; C: a process for patterning saidphotoresist layer by said lithographic method wherein, in a processusing a mask formed with a pattern within the resolution limit in thesection for forming said reflecting electrode, said photomask of saidphotoresist layer is utilized as said mask, so that said photoresistlayer corresponding to transparent section of said pixel and the sectionfor forming said contact holes formed in said interlayered insulatorfilm above said drain and source can be completely removed, and sosurface irregularities can be therefore be formed in said photoresistlayer corresponding to the section formed with said reflectingelectrode, D: a process using said photoresist layer patterned inprocess C as said etching mask for completely etching an opening in saidinterlayered insulator film for said permeable section of said pixel andthe section for forming said contact holes, and for etching saidinterlayered insulator film so that surface irregularities are formed insaid interlayered insulator film of the section for forming saidreflecting electrode.
 2. A manufacturing method for a liquid crystaldisplay device according to claim 1, wherein said photoresist layerpatterned in process C is made to reflow, and said etching mask ofprocess D is formed.
 3. A manufacturing method for a liquid crystaldisplay device according to claim 1, wherein in process C, a photomaskpatterned for said surface irregularities is used to form said surfaceirregularities in an interlayered insulator film to heighten thereflectivity of said reflecting electrode in a designated direction. 4.A manufacturing method for a liquid crystal display device according toclaim 1, comprising the following sequential processes performed aftersaid D process, wherein E: is a process for simultaneously forming froma metallic film; signal wiring and a source electrode connecting withsaid source by way of said contact holes, and a reflecting electrode anddrain electrode connecting to said drain by way of said contact holes,F: is a process for patterning a protective film in a region containingsaid pixel transparent section and reflecting section, so that thesection formed with said contact hole on said drain electrode as well asthe section for the transparent section of said pixel have openings, G:is a process for forming a transparent conductive film to comprise apattern containing said pixel transparent section and reflectingsection, and connect said transparent electrode and reflecting electrodeby way of said contact holes.
 5. A manufacturing method for a liquidcrystal display device according to claim 4, wherein in process F, aprotective film is formed from said photoresist, and in the patterningof said protective film, said protective film corresponding to thetransparent section of said pixel and the section for forming saidcontact hole on said drain electrode can be completely removed, and saidphotomask protective film used so that surface irregularities can beformed in said protective film corresponding to the section formed withsaid reflecting electrode, and patterning is performed by saidlithographic method, in a process using a mask forming a pattern belowthe resolution limit in the section forming said reflecting electrode,utilizing said protective film photomask.
 6. A manufacturing method fora liquid crystal display device according to claim 4 or claim 5, whereinthe film thickness of said protective film is adjusted so said cell gapof said liquid crystal display cell is ½λ in the permeable section and¼λ in the reflecting section of said pixel.
 7. A manufacturing methodfor a liquid crystal display device according to claim 1 comprising thefollowing sequential processes performed after said D process wherein,E: is a process for simultaneously forming from a metallic film; asignal wiring and a source electrode connecting with said source by wayof contact holes, and a reflecting electrode and drain electrodeconnecting to said drain by way of contact holes, G_(y): is a processfor forming a transparent conductive film to comprise a patterncontaining said pixel transparent section and reflecting section, andconnect said transparent electrode and said reflecting electrode.
 8. Amanufacturing method for a liquid crystal display device according toclaim 1 comprising the following sequential processes performed aftersaid D process, wherein E_(x): is a process for simultaneously forming apattern from said transparent conductive film wherein said patterncontains a signal wiring and a source electrode connecting with saidsource by way of contact holes, and a permeable and reflecting sectionof a pixel, and said drain electrode connecting to said drain by way ofsaid contact holes, G_(x): a process for forming a reflecting electrodefrom metallic film, connecting to said reflecting electrode andtransparent electrode.
 9. An active matrix type semipermeable liquidcrystal display device comprising an insulator film on said siliconlayer forming said source and said drain of said thin-film-transistor, areflecting electrode formed with surface irregularities on saidinterlayered insulator film in the reflecting section of said pixel, andsaid transparent electrode made of transparent conductive film on thetransparent section of said pixel, wherein said insulator layer betweensaid silicon film and said reflecting electrode is formed from one layerof insulator film.
 10. A liquid crystal display device according toclaim 9, wherein said transparent conductive film extends to saidreflective electrode and said transparent conductive film and reflectingelectrode are connected.
 11. A liquid crystal display device accordingto claim 10, wherein a protective film is installed between saidreflecting electrode and said transparent conductive film, and said cellgap of said liquid crystal display cell is set to ½λ in the permeablesection and set to ¼λ in the reflecting section of said pixel.
 12. Aliquid crystal display device according to claim 11, wherein surfaceirregularities are formed on said transparent conductive film of saidreflecting electrode.
 13. A liquid crystal display device according toclaim 9, wherein said transparent conductive film and said reflectingelectrode are formed in sequential laminations on said insulator film onthe reflecting section of said pixel, and said reflecting electrode andsaid transparent conductive film are connected.